msp3v3, msp5.0a www.vishay.com vishay general semiconductor revision: 12-jul-12 1 document number: 88486 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for protecting sensitive equipment against transient overvoltages. features ? very low profile - typical height of 0.65 mm ? ideal for automated placement ? oxide planar chip junction ? uni-directional polarity only ? peak pulse power: 150 w (10/1000 s) ? esd capability: 15 kv (air), 8 kv (contact) ? meets msl level 1, per j-st d-020c, lf maximum peak of 260 c ? aec-q101 qualified ? not recommended for pcb bottom side wave mounting ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 mechanical data case: microsmp molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 cla ss 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end notes (1) non-repetitive curren t pulse, per fig. 1 (2) mounted on 6.0 mm x 6.0 mm copper pads to each terminal (3) mounted on minimum r ecommended pad layout primary characteristics v wm 3.3 v to 5.0 v v br 4.1 v to 7.07 v p ppm 150 w t j max. 150 c polarity uni-directional package microsmp microsmp esmp ? series top view bottom view maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissi pation with a 10/1000 s waveform (fig. 1) p ppm (1)(2) 150 w peak pulse current with a 10/1000 s waveform i ppm (1) see next table a power dissipation t m = 120 c p d (2) 1.0 w power dissipation t a = 25 c p d (3) 0.5 w operating junction and storage temperature range t j , t stg - 55 to + 150 c
msp3v3, msp5.0a www.vishay.com vishay general semiconductor revision: 12-jul-12 2 document number: 88486 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? to calculate maximum clamping voltage at surge current uses the following formula: v cl max. = r d x i pp + v br max. (1) pulse test: t p ? 50 ms notes (1) free air, mounted on recommended pcb 1 oz. pad area; thermal resistance r ? ja - junction to ambient (2) units mounted on pcb with 6.0 mm x 6.0 mm coppe r pad areas; r ? jm - junction to mount notes (1) immunity to iec 61000-4-2 ai r discharge mode has a ty pical perfor mance > 30 kv (2) system esd standard note (1) automotive grade electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage current i r at v wm (a) maximum v c at i ppm r d maximum v c at i ppm r d 10/1000 s 8/20 s min. max. v c (v) i ppm (a) r d ( ? )v c (v) i ppm (a) r d ( ? ) msp3v3 kc 4.10 5.10 1.0 3.3 200 7.6 19.7 0.127 11.5 87 0.074 msp5.0a ae 6.40 7.07 10 5.0 100 9.2 16.3 0.131 13.4 75 0.085 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance r ? ja (1) 250 c/w r ? jm (2) 30 immunity to static electrical di scharge to the following standards (t a = 25 c unless otherwise noted) standard test type test conditions symbol class value aec-q101-001 human body model (con tact mode) c = 100 pf, r = 1.5 k ? v c h3b > 8 kv iec 61000-4-2 (2) human body model (a ir discharge mode) (1) c = 150 pf, r = 330 ? 4 > 15 kv ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode msp3v3-m3/89a 0.006 89a 4500 7" diam eter plastic tape and reel msp3v3hm3/89a (1) 0.006 89a 4500 7" diameter plastic tape and reel msp5.0a-m3/89a 0.006 89a 4500 7" diam eter plastic tape and reel msp5.0ahm3/89a (1) 0.006 89a 4500 7" diameter plastic tape and reel
msp3v3, msp5.0a www.vishay.com vishay general semiconductor revision: 12-jul-12 3 document number: 88486 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - pulse waveform fig. 2 - peak pulse power rating curve fig. 3 - pulse power or current vs. initial junction temperature fig. 4 - typical junction capacitance fig. 5 - power dissip ation derating curve fig. 6 - typical tran sient thermal impedance 0 0 50 100 150 1.0 2.0 3.0 4.0 t r = 10 s t r = 8 s t d = 1000 s t d = 20 s i ppm - peak pul s e current (% i r s m ) t - time (m s ) t d peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s defined a s the point where the peak current decay s to 50 % of i ppm 0.1 0.01 0.1 1 10 100 1 10 100 1000 10 000 p ppm - peak pul s e power (kw) t d - pul s e width ( s ) 0.24 " x 0.24 " (6.0 mm x 6.0 mm) copper pad area s non-repetitive pul s e waveform s hown in fig. 1 t a = 25 c 50 75 100 25 0 0 50 75 100 125 175 peak pul s e power (p pp ) or current (i pp ) derating in percentage (%) t j - initial temperature (c) 25 150 100 1000 33.544.555.56 c j - junction capacitance (pf) v wm - rever s e s tand-off voltage (v) mea s ured at s tand-off voltage, v wm mea s ured at zero bia s t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.0 0.2 0.4 0.6 0.8 1.0 1.2 50 0 100 150 175 ambient temperature (c) p d - power di ss ipation (w) 25 75 125 mounted on minimum recommende pad area t a = t m , mounted on 6.0 mm x 6.0 mm copper pad 1000 100 10 0.1 0.01 1 10 100 1000 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) junction to ambient
msp3v3, msp5.0a www.vishay.com vishay general semiconductor revision: 12-jul-12 4 document number: 88486 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.106 (2.70) 0.091 (2.30) 0.055 (1.40) 0.047 (1.20) cathode band micro s mp 0.030 (0.75) 0.022 (0.55) 0.030 (0.75) 0.022 (0.55) 0.059 (1.50) 0.043 (1.10) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.020 (0.50) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.079 (2.00) 0.032 (0.80) 0.032 (0.80) mountin g pad layout 0.029 (0.73) 0.025 (0.63)
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